Abstract
The current-voltage characteristics of structures with a layer of porous silicon of 73% porosity were measured at adsorption of gas (carbon monoxide) at room temperature. Estimations are performed of the height of potential heterobarrier at the interface between porous silicon and p +-type single-crystal silicon, of the perfectness factor and the resistance of a layer of porous silicon in air, in air with 0.4% CO, and in air with 2% CO. Physical causes explaining the experimental data are discussed.
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Original Russian Text © Z.H. Mkhitaryan, A.A. Shatveryan, V.M. Aroutiounian, 2007, published in Izvestiya NAN Armenii, Fizika, 2007, Vol. 42, No. 4, pp. 236–241.
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Mkhitaryan, Z.H., Shatveryan, A.A. & Aroutiounian, V.M. Current-voltage characteristics of structures with a porous silicon layer at adsorption of carbon monoxide. J. Contemp. Phys. 42, 158–161 (2007). https://doi.org/10.3103/S1068337207040066
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DOI: https://doi.org/10.3103/S1068337207040066