Abstract
An expression for distribution of the electric field in the base of a semiconductor p-n junction diode is obtained valid for arbitrary injection levels in the approximation of exponential distribution of non-equilibrium carriers in the diode base. It is shown that at a certain current the field is constant across the base which allows one to determine the mobility of majority carriers (whose concentration is determined from the barrier capacity measurements). For commercial D223B and D219A diodes the current-voltage characteristics and the differential resistance are measured and the mobility of electrons is calculated. The electric field distribution in the D223B diode is derived at three injection levels.
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Original Russian Text © N.S. Aramyan, 2007, published in Izvestiya NAN Armenii, Fizika, 2007, Vol. 42, No. 1, pp. 51–56.
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Aramyan, N.S. Electric field distribution in the base of semiconductor p-n junction diode. J. Contemp. Phys. 42, 34–37 (2007). https://doi.org/10.3103/S1068337207010070
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DOI: https://doi.org/10.3103/S1068337207010070