Abstract
An approach is developed to study temporal behavior of the active region overheating in high-power semiconductor lasers (λ = 1060 nm) with an ultrawide aperture (800 μm) operating in a quasi-continuous regime of pumping by current pulses with an amplitude of 21 A, a duration of 1 ms, and a repetition rate of 10 Hz. The approach is based on measuring the lasing dynamics with spectral selection. The lasing spectrum analysis shows that the region of the rising edge, where the amplitude of the current pulse increases, is characterized by a maximum red-shift rate of 30 nm ms–1, which is due to both thermal and nonthermal effects. The pulse region corresponding to a constant pump current amplitude is characterized only by a thermal red shift of the lasing spectrum long-wavelength edge at a rate of ~1 nm ms–1. The obtained experimental active region overheating is 2.78°C for the constant pump current amplitude range, which agrees with the calculated overheating of 3.08°C for the pump conditions under study.
Similar content being viewed by others
REFERENCES
Crump, P.A., Wilkens, M., Hübner, M., Arslan, S., Niemeyer, M., Basler, P.S., Martin, D., MaaBdorf, A., Ginolas, A., and Trankle, G., Efficient, high power 780 nm pumps for high energy class mid-infrared solid state lasers, Proc. SPIE, 2020, vol. 11262, p. 1126204. https://doi.org/10.1117/12.2545991
Karow, M.M., Frevert, C., Platz, R., Knigge, S., MaaBdorf, A., Erbert, G., and Crump, P., Efficient 600-W-laser bars for long-pulse pump applications at 940 and 975 nm, IEEE Photonics Technol. Lett., 2017, vol. 29, no. 19, p. 1683. https://doi.org/10.1109/LPT.2017.2743242
Karow, M.M., Martin, D., Della Casa, P., Erbert, G., and Crump, P.A., Design progress for higher efficiency and brightness in 1 kW diode-laser bars, Proc. SPIE, 2020, vol. 11262, p. 1126205. https://doi.org/10.1117/12.2545918
Ma, X., Zhang, N., Zhong, L., Liu, S., and Jing, H., Research progress of high power semiconductor laser pump source, High Power Laser and Particle Beams, 2020, vol. 32, p. 121010. https://doi.org/10.11884/HPLPB202032.200236
Zediker, M.S. and Zucker, E., High-power diode laser technology XX: A retrospective on 20 years of progress, Proc. SPIE, 2022, vol. 11983, p. 1198302. https://doi.org/10.1117/12.2615260
Brauch, U., Rocker, C., Graf, T., and Abdou Ahmed, M., High-power, high-brightness solid-state laser architectures and their characteristics, Appl. Phys. B, 2022, vol. 128, no. 58. https://doi.org/10.1007/s00340-021-07736-0
Hanxuan, L., Towe, T., Chyr, I., Brown, D., Touyen, N., Reinhardt, F., Xu, J., Srinivasan, R., Berube, M., Truchan, T., Bullock, R., and Harrison, Near 1 kW of continuous-wave power from a single high-efficiency diode-laser bar, J. IEEE Photonics Technol. Lett., 2007, vol. 19, no. 13, pp. 960–962. https://doi.org/10.1109/LPT.2007.898820
Hostetler, J., Jiang, C.-L., Roff, R., Negoita, V., Strohmaier, S., Tillkorn, C., Radionova, R., Miester, C., Vethake, T., Bonna, U., Huonker, M., Schmitz, C., and Dorsch, F., Passive cooling effects of low and high fill-factor 937 nm 1 cm arrays, Proc. SPIE, 2008, vol. 6876, p. 68760A. https://doi.org/10.1117/12.763443
Slipchenko, S.O., Podoskin, A.A., Veselov, D.A., Strelets, V.A., Rudova, N.A., Pikhtin, N.A., Bagaev, T.A., Ladugin, M.A., Marmalyuk, A.A., and Kop’ev, P.S., Tunnel-coupled laser diode microarray as a kW-level 100-ns pulsed optical power source (λ = 910 nm), IEEE Photonics Technol. Lett., 2022, vol. 34, no. 1, pp. 35–38. https://doi.org/10.1109/LPT.2021.3134370
Slipchenko, S.O., Podoskin, A.A., Veselov, D.A., Efremov, L.S., Zolotarev, V.V., Kazakova, A.E., Kop’ev, P.S., and Pikhtin, N.A., Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm, Quantum Electron., 2022, vol. 52, no. 2, pp. 171–173. https://doi.org/10.1070/QEL17985
Slipchenko, S.O., Romanovich, D.N., Gavrina, P.S., Veselov, D.A., Bagaev, T.A., Ladugin, M.A., Marmalyuk, A.A., and Pikhtin, N.A., High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures, Quantum Electron., 2022, vol. 52, no. 2, pp. 174–178. https://doi.org/10.1070/QEL17986
Slipchenko, S.O., Romanovich, D.N., Kapitonov V.A., Bakhvalov K.V., Pikhtin, N.A., and Kop’ev, P.S., High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture, Quantum Electron., 2022, vol. 52, no. 4, p. 340. https://doi.org/10.1070/QEL18014
Schroder, D., Meusel, J., Hennig, P., Lorenzen, D., Schroder, M., Hulsewede, R., and Sebastian, J., Increased power of broad-area lasers (808nm/980nm) and applicability to 10-mm bars with up to 1000 Watt QCW, Proc. SPIE, 2007, vol. 6456, p. 64560N. https://doi.org/10.1117/12.700021
Lorenzen, D., Schroder, M., Meusel, J., Hennig, P., Konig, H., Philippens, M., Sebastian, J., and Hülsewede, R., Comparative performance studies of indium and gold-tin packaged diode laser bars, Proc. SPIE, 2006, vol. 6104, p. 610404. https://doi.org/10.1117/12.659047
Bai, J.G., Chen, Z., Leisher, P., Bao, L., DeFranza, M., Grimshaw, M., DeVito, M., Martinsen, R., Kanskar, M., and Haden, J., High-efficiency kW-class QCW 88x-nm diode semiconductor laser bars with passive cooling, Proc. SPIE, 2012, vol. 8241, p. 82410W. https://doi.org/10.1117/12.910244
Menzel, U., Barwolff, A., Enders, P., Ackermann, D., Puchert, R., and Voss, M., Modelling the temperature dependence of threshold current, external differential efficiency and lasing wavelength in QW laser diodes, Semicond. Sci. Technol., 1995, vol. 10, no. 10, p. 1382. https://doi.org/10.1088/0268-1242/10/10/013
Carter, J., Snyder, D., and Reichenbaugh, J., Temperature dependence of optical wavelength shift as a validation technique for pulsed laser diode array thermal modeling, Proc. 19th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, San Jose, 2003. https://doi.org/10.1109/STHERM.2003.1194385
Chen, C., Xin, G., Qu, R., and Fang, Z., Measurement of thermal rise-time of a laser diode based on spectrally resolved waveforms, Opt. Commun., 2006, vol. 260, no. 1, pp. 223–226. https://doi.org/10.1016/j.optcom.2005.10.011
Kowalczyk, E., Ornoch, L., Gniazdowski, Z., and Mroziewicz, B., Dynamics of thermo-optical properties of semiconductor lasers, Proc. SPIE, 2007, vol. 6456, p. 64561G. https://doi.org/10.1117/12.700548
Usechak, N.G. and Hostetler, J.L., Single-shot, high-speed, thermal-interface characterization of semiconductor laser arrays, IEEE J. Quantum Electron., 2009, vol. 45, no. 5, pp. 531–541. https://doi.org/10.1109/JQE.2009.2013097
Voss, M., Lier, C., Menzel, U., Barwolff, A., and Elsaesser, T., Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks, J. Appl. Phys., 1996, vol. 79, no. 2, pp. 1170–1172. https://doi.org/10.1063/1.360900
Zhang, H., Jia, Y., Zah, C.-E., and Liu, X., Thermally induced chirp studies on spectral broadening of semiconductor laser diode arrays, Appl. Opt., 2018, vol. 57, no. 20, pp. 5599–5603. https://doi.org/10.1364/AO.57.005599
Min, Y.J., Palisoc, A.L., and Lee, C.C., Transient thermal study of semiconductor devices, IEEE Trans. Compon., Hybrids and Manuf. Technol., 1990, vol. 13, no. 4, pp. 980–988. https://doi.org/10.1109/33.62539
Carter, J., Snyder, D., and Reichenbaugh, J., Transient thermal modeling of high-power pulsed laser diode arrays, Proc. 19th Annual IEEE Semiconductor Thermal Measurement and Management Symp., San Jose, 2003, IEEE, 2003, pp. 276–283. https://doi.org/10.1109/STHERM.2003.1194374
Funding
The work is supported by the Russian Science Foundation, project no. 19-79-30072.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflicts of interest.
Additional information
Translated by E. Oborin
About this article
Cite this article
Shashkin, I.S., Rybkin, A.D., Kryuchkov, V.A. et al. Heating Dynamics of the Active Region of High-Power Semiconductor Lasers (λ = 1060 nm) with an Ultra-Wide Aperture (800 µm) in the Quasi-CW Mode. Bull. Lebedev Phys. Inst. 50 (Suppl 1), S18–S24 (2023). https://doi.org/10.3103/S1068335623130122
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1068335623130122