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Effect of Heat Treatment Conditions on the Structural Features of Porous Silicon Films Formed by Metal-Assisted Etching

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Abstract

The results of the study of the effect of thermal annealing and diffusion on the structure of a porous silicon film formed by metal-assisted etching on a single-crystal silicon substrate are presented. The porous silicon film surface is studied by scanning electron microscopy and Raman scattering spectroscopy.

It is shown that thermal treatment modes affect the morphology of porous silicon films on micro- and nanometer scales.

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REFERENCES

  1. Li, J.Y., Hung, C.H., and Chen, C.Y., Hybrid black silicon solar cells textured with the interplay of copper-induced galvanic displacement, Sci. Rep., 2017, vol. 7, no. 1, pp. 1–10.https://doi.org/10.1038/s41598-017-17516-6

    Article  Google Scholar 

  2. Madhavi, K., Mohan, R.G., Habibuddin, S., and Padmasuvarna, R., Study of the properties of the porous silicon synthesized by Ag assisted electrolysis etching, Intern. Lett. Chem. Phys. Astron., 2016, vol. 71, pp. 40–48.https://doi.org/10.18052/www.scipress.com/ILCPA.71.40

    Article  Google Scholar 

  3. Melnik, N.N., Tregulov, V.V., Skoptsova, G.N., et al., Properties of a p-n junction formed in a porous silicon film grown by metal-assisted chemical etching, Bull. Lebedev Phys. Inst., 2022, vol. 49, no. 9, pp. 271–275.https://doi.org/10.3103/S1068335622090044

    Article  ADS  Google Scholar 

  4. Melnik, N.N., Tregulov, V.V., Skoptsova, G.N., et al., Observation of the Fano resonance in a semiconductor structure with a p-n junction formed in a porous silicon film, Bull. Lebedev Phys. Inst., 2023, vol. 50, no. 2, pp. 52–54.https://doi.org/10.3103/S1068335623020057

    Article  ADS  Google Scholar 

  5. Tregulov, V.V., Skoptsova, G.N., Rybin, N.B., et al., The effect of thermal annealing of semiconductor structure with porous silicon film on mechanisms of carrier transfer, Vestnik RSREU, 2023, no., 84, pp. 215—224.

  6. Yang, M., Huang, D., and Hao, P., Study of the Raman peak shift and the linewidth of light-emitting porous silicon, J. Appl. Phys., 1994, vol. 75, no. 1, pp. 651–653.https://doi.org/10.1063/1.355808

    Article  ADS  Google Scholar 

  7. Lavrentiev, V., Vacik, J., Vorlicek, V., and Vosecek, V., Raman scattering in silicon disordered by gold ion implantation, Phys. Status Solidi, B Basic Res., 2010, vol. 247, no. 8, pp. 2022–2026.https://doi.org/10.1002/pssb.200983932

    Article  ADS  Google Scholar 

  8. Mohmoh, H., Ouchetto, M., Couzi, M., et al., Structural relationship between vitreous P2O5 and its relevant crystalline polymorphs by Raman spectroscopy, Phosphorous Res. Bull., 2002, no. 13, pp. 187—192. https://hal.archives-ouvertes.fr/hal-00719675

  9. Goryachev, D.N., Belyakov, L.V., and Sreseli, O.M., On the mechanism of porous silicon formation, Semiconductors, 2000, vol. 34, pp. 1090–1093.https://doi.org/10.1134/1.1309429

    Article  ADS  Google Scholar 

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Funding

This work was supported by ongoing institutional funding. No additional grants to carry out or direct this particular research were obtained.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    N. N. Melnik & D. S. Kostsov

  2. Yesenin Ryazan State University, 390000, Ryazan, Russia

    V. V. Tregulov, G. N. Skoptsova & A. I. Ivanov

  3. Ryazan State Radio Engineering University, 390005, Ryazan, Russia

    N. B. Rybin & N. V. Rybina

Authors
  1. N. N. Melnik
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  2. V. V. Tregulov
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  3. G. N. Skoptsova
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  4. A. I. Ivanov
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  5. N. B. Rybin
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  6. N. V. Rybina
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  7. D. S. Kostsov
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Corresponding authors

Correspondence to N. N. Melnik, V. V. Tregulov, G. N. Skoptsova, A. I. Ivanov or N. B. Rybin.

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Translated by A. Kazantsev

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Melnik, N.N., Tregulov, V.V., Skoptsova, G.N. et al. Effect of Heat Treatment Conditions on the Structural Features of Porous Silicon Films Formed by Metal-Assisted Etching. Bull. Lebedev Phys. Inst. 50, 486–490 (2023). https://doi.org/10.3103/S1068335623110076

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  • DOI: https://doi.org/10.3103/S1068335623110076

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