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Observation of the Fano Resonance in a Semiconductor Structure with a p–n Junction Formed in a Porous Silicon Film

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Abstract

The observation of a Fano resonance by Raman spectroscopy in a semiconductor structure with a p–n junction formed by thermal diffusion of boron in a porous silicon film is reported. The porous film is grown by metal-assisted etching on a single-crystal n-type silicon substrate.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    N. N. Melnik & D. S. Kostsov

  2. Yesenin Ryazan State University, 390000, Ryazan, Russia

    V. V. Tregulov, G. N. Skoptsova & A. I. Ivanov

Authors
  1. N. N. Melnik
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  2. V. V. Tregulov
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  3. G. N. Skoptsova
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  4. A. I. Ivanov
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  5. D. S. Kostsov
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Corresponding authors

Correspondence to N. N. Melnik, V. V. Tregulov, G. N. Skoptsova or A. I. Ivanov.

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The authors declare that they have no conflicts of interest.

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Translated by A. Kazantsev

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Melnik, N.N., Tregulov, V.V., Skoptsova, G.N. et al. Observation of the Fano Resonance in a Semiconductor Structure with a p–n Junction Formed in a Porous Silicon Film. Bull. Lebedev Phys. Inst. 50, 52–54 (2023). https://doi.org/10.3103/S1068335623020057

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  • DOI: https://doi.org/10.3103/S1068335623020057

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