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Effect of the Thickness of Passivating Reactive Titanium Layer of Mirror Faces on the Electric Characteristics of Diode Lasers

  • CONTROL OF LASER RADIATION PARAMETERS
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Abstract

The method for determining the admissible thickness of titanium layer for passivating the radiating faces of diode laser is described. Passivation by reactive metal can be easily introduced into the production process of diode lasers. As a reactive metal titanium was chosen, because it serves as adhesive layer of ohmic contacts of semiconductor structures. It is shown how the I–V curve of the diode laser tends to the shape before the coating deposition as the layer of the deposited titanium decreases from 4.3 to 0.7 nm.

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REFERENCES

  1. Byer, R.L., Science, 1988, vol. 239, p. 4841.

    Article  Google Scholar 

  2. Burtsev, A.A., Belov, S.A., Shlegel, A.N., and Novikov, A.A., Abstracts of Papers, 12 Mezhdunarodnaya nauchno-tekhnicheskaya konferentsiya “Priborostroenie-2019” (12 International Scientific and Technical Conference “Instrument Making”), Minsk, 2019, p. 386.

  3. Li, L., Opt. Lasers Eng., 2000, vol. 34, p. 4.

    Article  Google Scholar 

  4. Gafurov, S.D., Katakhonov, Sh.M., and Kholmonov, M.M., Eur. Sci., 2019, vol. 3, p. 45.

    Google Scholar 

  5. Zaitseva, V.V., Mikhailenko, V.S., and Kicha, M.A., Vestnik MANEB, 2021, vol. 26, p. 3.

    Google Scholar 

  6. Schmidt, M., Zah, M., Li, L., Duflou, J., Overmeyer, L., and Vollertsen, F., CIRP Annals, 2018, vol. 67, p. 2.

    Article  Google Scholar 

  7. Epperlein, P.W., Semiconductor Laser Engineering, Reliability, and Diagnostics: A Practical Approach to High Power and Single Mode Devices, Chichester: Wiley, 2013.

    Book  Google Scholar 

  8. Eliseev, P.G., J. Lumin., 1973, vol. 7, p. 1.

    Article  Google Scholar 

  9. Hempel, M., La Mattina, F., Tomm, J.W., Zeimer, U., Broennimann, R., and Elsaesser, T., Semicond. Sci. Technol., 2011, vol. 26, p. 7.

    Google Scholar 

  10. Hempel, M., Tomm, J.W., Hortelano, V., Michel, N., Jim, J., Krakowski, M., and Elsaesser, T., Laser Photon. Rev., 2012, vol. 6, p. 6.

    Article  Google Scholar 

  11. Nakwaski, W., J. Appl. Phys., 1985, vol. 57, p. 7.

    Article  Google Scholar 

  12. Hempel, M., Tomm, J.W., Ziegler, M., Elsaesser, T., Michel, N., and Krakowski, M., Appl. Phys. Lett., 2010, vol. 97, p. 23.

    Article  Google Scholar 

  13. Tomm, J.W., Ziegler, M., Talalaev, V., Matthiesen, C., Elsaesser, T., Sanayeh, M.B., et al., Novel In-Plane Semicond. Lasers, 2009, vol. VIII, p. 7230.

    Google Scholar 

  14. Tang, W.C., Rosen, H.J., Vettiger, P., and Webb, D.J., Appl. Phys. Lett., 1991, vol. 58, p. 557.

    Article  ADS  Google Scholar 

  15. Tang, W.C., Rosen, H.J., Vettiger, P., and Webb, D.J., Appl. Phys. Lett., 1991, vol. 59, p. 1005.

    Article  ADS  Google Scholar 

  16. Moser, A. and Latta, E.E., J. Appl. Phys., 1992, vol. 71, p. 10.

    Article  Google Scholar 

  17. Ziegler, M., Hempel, M., Larsen, H.E., Tomm, J.W., Andersen, P.E., Clausen, S., et al., Appl. Phys. Lett., 2010, vol. 97, p. 2.

    Article  Google Scholar 

  18. Chin, A.K., Bertaska, R.K., Jaspan, M.A., Flusberg, A.M., Swartz, S.D., et al., Proc SPIE, 2009, vol. 7198, p. 7198A.

    Google Scholar 

  19. Jacob, J.H., Petr, R., Jaspan, M.A., Swartz, S.D., Knapczyk, M.T., et al., Proc SPIE, 2009, vol. 7198, p. 719815. https://doi.org/10.1117/807717

  20. Tihanyi, P. and Bauer, R.S., US Patent 4656638, 1987.

  21. Desmoulins-Krawiec, S., Aymonier, C., Loppinet-Serani, A., Weill, F., Gorsse, S., Etourneau, J., Cansell, F., J. Mater. Chem., 2004, vol. 14, p. 2.

    Article  Google Scholar 

  22. Palm, K.J., Murray, J.B., Narayan, T.C., and Munday, J.N., Acs. Photon., 2018, vol. 5, p. 11.

    Article  Google Scholar 

  23. Siefke, T., Kroker, S., Pfeiffer, K., Puffky, O., Dietrich, K., Franta, D., et al., Adv. Opt. Mater., 2016, vol. 4, p. 11.

    Article  Google Scholar 

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Correspondence to N. S. Utkov.

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Translated by E. Oborin

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Utkov, N.S., Drakin, A.E. & Mikaelyan, G.T. Effect of the Thickness of Passivating Reactive Titanium Layer of Mirror Faces on the Electric Characteristics of Diode Lasers. Bull. Lebedev Phys. Inst. 49 (Suppl 1), S53–S57 (2022). https://doi.org/10.3103/S1068335622130139

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  • DOI: https://doi.org/10.3103/S1068335622130139

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