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Structural Features of the Surface Region of the CdS/por-Si/p-Si Heterostructure with a Porous Silicon Film Formed by Metal-Assisted Chemical Etching

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Abstract

The surface region of the CdS/por-Si/p-Si heterostructure in which the porous layer was formed by metal-assisted etching of the single-crystal p-Si substrate is studied by scanning electron microscopy and Raman spectroscopy methods. Experimental results of the CdS film morphology study are processed using two-dimensional detrended fluctuation analysis and average mutual information methods. It is shown that the porous layer has a significant effect on structural features of the CdS film.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    N. N. Melnik

  2. Ryazan State University named for S. Yesenin, 390000, Ryazan, Russia

    V. V. Tregulov

  3. Ryazan State Radio Engineering University, 390005, Ryazan, Russia

    N. B. Rybin & N. V. Rybina

Authors
  1. N. N. Melnik
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  2. V. V. Tregulov
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  3. N. B. Rybin
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  4. N. V. Rybina
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Corresponding authors

Correspondence to N. N. Melnik, V. V. Tregulov or N. B. Rybin.

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Translated by A. Kazantsev

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Melnik, N.N., Tregulov, V.V., Rybin, N.B. et al. Structural Features of the Surface Region of the CdS/por-Si/p-Si Heterostructure with a Porous Silicon Film Formed by Metal-Assisted Chemical Etching. Bull. Lebedev Phys. Inst. 47, 205–208 (2020). https://doi.org/10.3103/S1068335620070040

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  • DOI: https://doi.org/10.3103/S1068335620070040

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