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Luminescence Degradation Mechanisms in CdS/ZnSe Colloidal Nanocrystals

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Abstract

The results of the study of one-photon processes of optically induced degradation of photoluminescence intensity of CdS/ZnSe nanocrystals are presented, and mechanisms of this degradation are determined. It is shown that the nanocrystal photodegradation process consists of three components. The first degradation component is caused by Auger recombination activation in photoinduced hole trapping by the trap associated with a surface state; a long-term degradation component can be associated with thermally activated chemical bond breaking between a passivating ligand, i.e., oleic acid, and the nanocrystal surface followed by nonradiative recombination channel activation.

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ACKNOWLEDGMENTS

The authors are grateful to A.S. Selyukov for helpful discussion of the results.

Funding

This work (spectroscopic studies) was supported by the Russian Science Foundation, project no. 17-72-20088 and degradation measurements) by the Russian Foundation for Basic Research, project no. 18-02-00653_a.

Author information

Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    M. S. Zabolotskii, A. V. Katsaba, S. A. Ambrozevich & A. G. Vitukhnovskii

  2. Moscow Institute of Physics and Technology, 141700, Dolgoprudnyi, Moscow oblast, Russia

    M. S. Zabolotskii, A. V. Katsaba, S. A. Ambrozevich & A. G. Vitukhnovskii

  3. Bauman Moscow State Technical University, 105005, Moscow, Russia

    S. A. Ambrozevich

  4. Materials Science Faculty, Moscow State University, 119991, Moscow, Russia

    R. B. Vasil’ev

Authors
  1. M. S. Zabolotskii
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  2. A. V. Katsaba
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  3. S. A. Ambrozevich
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  4. A. G. Vitukhnovskii
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  5. R. B. Vasil’ev
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Corresponding author

Correspondence to S. A. Ambrozevich.

Additional information

Translated by A. Kazantsev

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Zabolotskii, M.S., Katsaba, A.V., Ambrozevich, S.A. et al. Luminescence Degradation Mechanisms in CdS/ZnSe Colloidal Nanocrystals. Bull. Lebedev Phys. Inst. 47, 185–189 (2020). https://doi.org/10.3103/S1068335620060020

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  • DOI: https://doi.org/10.3103/S1068335620060020

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