Radiative Recombination Mechanisms Involving Exciton States of the Direct Fundamental Absorption Edge in Bilayer WSe2
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Methods for production of atomically thin WSe2 films and optical control of their thickness are developed. For two-monolayer-thick WSe2 films, photoluminescence spectra associated with the emission of exciton states of the direct fundamental absorption edge at a temperature of 5–70 K are measured. Along with the emission of intrinsic excitons of the bilayer, new defect-related emission lines are detected.
Keywordslayered semiconductors luminescence exciton multi-particle effects
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This study was supported by the Russian Science Foundation, project no. 18-72-00235.
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