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Bulletin of the Lebedev Physics Institute

, Volume 41, Issue 3, pp 63–67 | Cite as

Kinetics of water molecule adsorption on the porous silicon surface

  • D. M. Kurmasheva
  • V. D. Travkin
  • P. O. Kapralov
  • V. G. Artemova
  • V. I. Tikhonov
  • A. A. Volkov
  • E. S. Zhukov
  • D. G. Artemov
  • N. P. Chirskaya
Article
  • 57 Downloads

Abstract

The kinetics of water vapor adsorption on the porous silicon surface is studied by the gas relaxometry method. The process multistepping which is reflected in sequential changes in H2O molecule diffusivities into the porous matrix, is found. Phenomenological models describing the experiment are considered.

Keywords

Water Vapor Porous Silicon LEBEDEV Physic Institute Water Vapor Pressure Water Vapor Concentration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Allerton Press, Inc. 2014

Authors and Affiliations

  • D. M. Kurmasheva
    • 1
  • V. D. Travkin
    • 1
  • P. O. Kapralov
    • 1
  • V. G. Artemova
    • 1
  • V. I. Tikhonov
    • 1
  • A. A. Volkov
    • 1
  • E. S. Zhukov
    • 1
  • D. G. Artemov
    • 1
  • N. P. Chirskaya
    • 1
  1. 1.Prokhorov General Physics InstituteRussian Academy of SciencesMoscowRussia

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