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Resonant-tunneling structure of quantum wells in the p-i-n photovoltaic element

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Abstract

The method for efficient separation of photoexcited carriers, based on the resonant tunneling phenomenon in the quantum well structure placed into the i-region of the p-i-n photovoltaic element, is proposed. The parameters of quantum well structures based on the GaAs/Ga1−x In x As system, implementing the mode of sequential resonant tunneling in the electric field of the GaAs p-i-n junction, is calculated. A microscopic model of resonant-tunneling transport in such structures is constructed, and the kinetic tunneling times are calculated depending on well and barrier parameters. The possibility of achieving sufficiently short (<∼10 ps) tunneling times and, hence, quite efficient removal of photoelectrons and photoholes from quantum wells at a proper choice of barrier powers is shown.

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Correspondence to M. P. Telenkov.

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Original Russian Text © M.P. Telenkov, Yu.A. Mityagin, 2013, published in Kratkie Soobshcheniya po Fizike, 2013, Vol. 40, No. 12, pp. 32–42.

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Telenkov, M.P., Mityagin, Y.A. Resonant-tunneling structure of quantum wells in the p-i-n photovoltaic element. Bull. Lebedev Phys. Inst. 40, 346–353 (2013). https://doi.org/10.3103/S106833561312004X

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  • DOI: https://doi.org/10.3103/S106833561312004X

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