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Bulletin of the Lebedev Physics Institute

, Volume 40, Issue 4, pp 104–107 | Cite as

Multiplicity of charged particles in electron-induced showers developing in oriented silicon and tungsten crystals

  • V. A. Baskov
  • V. V. Kim
  • B. I. Luchkov
  • V. Yu. Tugaenko
  • V. A. Khablo
Article

Abstract

A more than twofold increase in the average multiplicity of charged particles in electromagnetic showers initiated by electrons with an energy of 26 GeV in tungsten crystals 2.7, 5.8, and 8.4 mm thick, oriented along the 〈111〉 axis, in comparison with misoriented crystals is shown. For a silicon crystal 20 mm thick, oriented along the 〈110〉 axis, at an electron energy of 28 GeV, the average multiplicity of charged particles increases by a factor of ∼1.6. The widths of the orientation dependences of the average multiplicity of charged particles in electron-induced showers in silicon and tungsten crystals are proportional to the crystal thickness and depend on the electron energy as E −1/2.

Keywords

Charged Particle Electron Energy Silicon Crystal LEBEDEV Physic Institute Orientation Dependence 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    V. N. Baier, V. M. Katkov, and V. M. Strakhovenko, Electromagnetic Processes at High Energy in Oriented Single Crystals (Nauka, Novosibirsk, 1989; World Scientific, Singapore, 1998).Google Scholar
  2. 2.
    A. I. Akhizer and N. F. Shul’ga, Zh. Eksp. Teor. Fiz. 85, 94 (1983).Google Scholar
  3. 3.
    V. A. Baskov, V. V. Kim, B. I. Luchkov, et al., Prib. Tekh. Eksp. 6, 10 (1996) [Instrum. Exp. Tech. 39, 780 (1996)].Google Scholar
  4. 4.
    V. A. Baskov, Preprint No. 36 (Lebedev Physical Institute, Moscow, 2011).Google Scholar
  5. 5.
    K. Elsener, S. P. Moller, J. B. B. Petersen, and E. Uggerhoj, Phys. Lett. B 212, 537 (1988).ADSCrossRefGoogle Scholar
  6. 6.
    R. Medenwaldt, S. P. Moller, S. Tang-Petersen, et al., Phys. Lett. B 227, 483 (1989).ADSCrossRefGoogle Scholar
  7. 7.
    R. Medenwaldt, S. P. Moller, S. Tang-Petersen, et al., Phys. Lett. B 242, 517 (1990).ADSCrossRefGoogle Scholar
  8. 8.
    V.A. Baskov, V. V. Kim, I. V. Konorov, et al. Prib. Tekh.Eksp. 5, 58 (1990).Google Scholar
  9. 9.
    V. A. Baskov, V. V. Kim, B. I. Luchkov, et al., Preprint No. 14 (Lebedev Physical Institute, Moscow, 2012).Google Scholar
  10. 10.
    V. A. Baskov, V.V. Kim, B. I. Luchkov, et al., Kratkie Soobshcheniya po Fizike FIAN 38(6), 8 (2011) [Bulletin of the Lebedev Physics Institute 38, 158 (2011)].Google Scholar

Copyright information

© Allerton Press, Inc. 2013

Authors and Affiliations

  • V. A. Baskov
    • 1
  • V. V. Kim
    • 1
  • B. I. Luchkov
    • 2
  • V. Yu. Tugaenko
    • 2
  • V. A. Khablo
    • 1
  1. 1.Lebedev Physical InstituteRussian Academy of SciencesMoscowRussia
  2. 2.National Research Nuclear University “MEPhI”MoscowRussia

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