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Photoluminescence spectra of TlGaSe2 semiconductor structures

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Abstract

The results of the study of photoluminescence and its excitation spectra in TlGaSe2 single crystals are presented. The ability of these layered crystals to be cleaved by plates with mirror faces, being a consequence of sharp asymmetry of the chemical bond, makes them promising materials for photoelectric converters.

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Additional information

Original Russian Text © A.N. Georgobiani, A.M. Evloev, 2009, published in Kratkie Soobshcheniya po Fizike, 2009, Vol. 36, No. 10, pp. 19–23.

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Georgobiani, A.N., Evloev, A.M. Photoluminescence spectra of TlGaSe2 semiconductor structures. Bull. Lebedev Phys. Inst. 36, 293–295 (2009). https://doi.org/10.3103/S1068335609100030

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  • DOI: https://doi.org/10.3103/S1068335609100030

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