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Sensitivity of Moisture-Sensitive Structures with UV Recovery, Based on ZnO Prepared via Sol-Gel Synthesis

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A structure is developed on the basis of thin-film nanocrystalline ZnO on a flexible Kapton substrate. The ZnO is obtained via sol-gel synthesis. It is found that the structure’s electrical resistance grows substantially under the influence of moisture contained in the atmosphere. The resistance of the structure falls by almost two orders of magnitude upon exposure to ultraviolet radiation. A long process of recovering electrical conductivity, described by the fractional exponential Kohlrausch function, is observed after exposure ceases.

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Authors and Affiliations

  1. Voronezh State Technical University, 394006, Voronezh, Russia

    D. S. Permyakov, M. A. Belykh & A. V. Strogonov

Authors
  1. D. S. Permyakov
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  2. M. A. Belykh
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  3. A. V. Strogonov
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Correspondence to D. S. Permyakov.

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Translated by O. Pismenov

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Permyakov, D.S., Belykh, M.A. & Strogonov, A.V. Sensitivity of Moisture-Sensitive Structures with UV Recovery, Based on ZnO Prepared via Sol-Gel Synthesis. Bull. Russ. Acad. Sci. Phys. 87, 1372–1376 (2023). https://doi.org/10.3103/S1062873823703331

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  • DOI: https://doi.org/10.3103/S1062873823703331

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