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Conductivity of a Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3 Film Heterostructure

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A study is performed of the temperature behavior of the electrical resistance of Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3 film heterostructures on MgO substrates. It is shown that the resistance falls considerably along with temperature, below the maximum temperature of ~170 K. This behavior can be attributed to the interface transitioning to a highly conductive state, since it is very similar to the behavior of a Ba0.8Sr0.2TiO3/LaMnO3 heterostructure on a single-crystal LaMnO3 substrate.

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Funding

This work was supported by the Russian Science Foundation, project no. 21-12-00179.

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Authors and Affiliations

  1. Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, 420029, Kazan, Russia

    A. O. Chibirev, A. V. Leontyev, M. I. Bannikov & R. F. Mamin

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  1. A. O. Chibirev
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  2. A. V. Leontyev
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  3. M. I. Bannikov
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  4. R. F. Mamin
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Corresponding author

Correspondence to A. O. Chibirev.

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The authors declare that they have no conflicts of interest.

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Translated by E. Bondareva

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Chibirev, A.O., Leontyev, A.V., Bannikov, M.I. et al. Conductivity of a Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3 Film Heterostructure. Bull. Russ. Acad. Sci. Phys. 87, 465–467 (2023). https://doi.org/10.3103/S1062873822701465

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  • DOI: https://doi.org/10.3103/S1062873822701465

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