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Proximity Effect in InGaAs/GaAs/CoPt Ferromagnetic Structures

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The ferromagnetic influence of a thin (~8 nm) surface CoPt layer on the circular polarization of the InGaAs/GaAs quantum well photoluminescence is observed in the structure of GaAs/InGaAs/GaAs/Al2O3(1 nm)/CoPt with narrow GaAs spacer ds = 5 nm, while electroluminescence is polarized throughout the range of ds = 5–100 nm. It is suggested that the short-range proximity effect is due to the overlap of electron wavefunctions and the nearby ferromagnetic CoPt film.

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ACKNOWLEDGMENTS

The author is grateful to M.V. Dorokhin and B.N. Zvonkov for providing his samples.

Funding

This work was performed as part of a State Task for the Institute of Solid State Physics, Russian Academy of Sciences.

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Authors and Affiliations

  1. Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia

    S. V. Zaitsev

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  1. S. V. Zaitsev
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Correspondence to S. V. Zaitsev.

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The author declares he has no conflicts of interest.

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Translated by L. Mosina

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Zaitsev, S.V. Proximity Effect in InGaAs/GaAs/CoPt Ferromagnetic Structures. Bull. Russ. Acad. Sci. Phys. 87, 182–186 (2023). https://doi.org/10.3103/S1062873822700897

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  • DOI: https://doi.org/10.3103/S1062873822700897

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