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Non-Adiabatic Fast Quantum Memory on an Atom-Resonator System Provided by Optimal Switching on a Control Field

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The efficiency of non-adiabatic quantum memory based on the Raman interaction between a photon and a three-level atom in a high-Q resonator was investigated. The optimum gradual switch-on form of a control field ensures high efficiency of the fast quantum memory is found. Proposals for improving the basic parameters of the considered quantum memory using realistic experimental parameters are shortly disscussed.

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Funding

This work was supported by the RF Ministry of Educa- tion and Science, reg. nо. NIOKTR 121020400113-1.

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Authors and Affiliations

  1. Kazan National Research Technical University, 420111, Kazan, Russia

    Yu. A. Kharlamova, N. M. Arslanov & S. A. Moiseev

Authors
  1. Yu. A. Kharlamova
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  2. N. M. Arslanov
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  3. S. A. Moiseev
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Corresponding author

Correspondence to S. A. Moiseev.

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The authors declare that they have no conflicts of interest.

Additional information

Translated by A. Shishulin

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Kharlamova, Y.A., Arslanov, N.M. & Moiseev, S.A. Non-Adiabatic Fast Quantum Memory on an Atom-Resonator System Provided by Optimal Switching on a Control Field. Bull. Russ. Acad. Sci. Phys. 86, 1507–1510 (2022). https://doi.org/10.3103/S1062873822120139

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  • DOI: https://doi.org/10.3103/S1062873822120139

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