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Deformation of Semipolar and Polar Gallium Nitride Synthesized on a Silicon Substrate

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

Results from studying deformation are obtained for semipolar GaN(11–22) grown on a nanostructured Si(113) substrate and polar GaN(0001) grown on a flat Si(111) substrate. A comparison of the structures of semipolar and polar epitaxy reveals a drop in layer deformation resulting from the smaller difference between the coefficients of thermal expansion of the substrate and gallium nitride in the semipolar direction of the crystal than in the polar direction.

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ACKNOWLEDGEMENTS

The authors thank V. K. Smirnov for providing our templates.

Funding

This work was supported by the Russian Foundation for Basic Research, project no. 20-08-00096.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy Sciences, 194021, St. Petersburg, Russia

    V. N. Bessolov, M. E. Kompan, E. V. Konenkova & S. N. Rodin

Authors
  1. V. N. Bessolov
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  2. M. E. Kompan
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  3. E. V. Konenkova
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  4. S. N. Rodin
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Corresponding author

Correspondence to E. V. Konenkova.

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The authors declare that they have no conflicts of interest.

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Translated by V. Vetrov

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Bessolov, V.N., Kompan, M.E., Konenkova, E.V. et al. Deformation of Semipolar and Polar Gallium Nitride Synthesized on a Silicon Substrate. Bull. Russ. Acad. Sci. Phys. 86, 817–819 (2022). https://doi.org/10.3103/S1062873822070103

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  • DOI: https://doi.org/10.3103/S1062873822070103

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