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Mechanisms of Carrier Polarization in Ferromagnetic InGaAs/GaAs/δ-〈Mn〉 Heterostructures


It is found that the degree of circular polarization of the photoluminescence of an InGaAs/GaAs/δ-〈Mn〉 quantum well with a ferromagnetic Mn δ-layer (a GaAs spacer with thickness ds = 2–10 nm) depends largely on the conditions of photoexcitation (mainly the power density). This is explained by the dynamic model of the spin-dependent capture of electrons from a quantum well into a δ-〈Mn〉 layer and manifests as nonstationary polarization in the pulsed mode. The stationary mechanism of carrier polarization also plays an important role in structures with a narrow spacer (ds ≤ 3 nm), due to their exchange coupling with the δ-〈Mn〉 layer.

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  1. Dietl, T. and Ohno, H., Rev. Mod. Phys., 2014, vol. 86, p. 187.

    ADS  Article  Google Scholar 

  2. Zakharchenya, B.P. and Korenev, V.L., Phys. Usp., 2005, vol. 48, p. 603.

    ADS  Article  Google Scholar 

  3. Myers, R.C., Gossard, A.C., and Awschalom, D.D., Phys. Rev. B, 2004, vol. 69, 161305(R).

    ADS  Article  Google Scholar 

  4. Zaitsev, S.V., Dorokhin, M.V., Brichkin, A.S., et al., JETP Lett., 2010, vol. 90, p. 658.

    ADS  Article  Google Scholar 

  5. Korenev, V.L., Akimov, I.A., Zaitsev, S.V., et al., Nat. Commun., 2012, vol. 3, p. 959.

    ADS  Google Scholar 

  6. Akimov, I.A., Korenev, V.L., Sapega, V.F., et al., Phys. Status Solidi B, 2014, vol. 251, p. 1663.

    ADS  Article  Google Scholar 

  7. Dmitriev, A.I., Talantsev, A.D., Zaitsev, S.V., et al., J. Phys.: Conf. Ser., 2012, vol. 345, no. 1.

  8. Pankov, M.A., Aronzon, B.A., Rylkov, V.V., et al., J. Exp. Theor. Phys., 2009, vol. 109, no. 2, p. 293.

    ADS  Article  Google Scholar 

  9. Zaitsev, S.V., Kulakovskii, V.D., Dorokhin, M.V., et al., Phys. E (Amsterdam, Neth.), 2009, vol. 41, p. 652.

    Google Scholar 

  10. Rozhansky, I.V., Denisov, K.S., Averkiev, N.S., et al., Phys. Rev. B, 2015, vol. 92, 125428.

    ADS  Article  Google Scholar 

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This work was performed as part of a State Task for the Institute of Solid State Physics, Russian Academy of Sciences.

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Correspondence to S. Zaitsev.

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Translated by O. Zhukova

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Zaitsev, S. Mechanisms of Carrier Polarization in Ferromagnetic InGaAs/GaAs/δ-〈Mn〉 Heterostructures. Bull. Russ. Acad. Sci. Phys. 86, 443–447 (2022).

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