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Mechanisms of Carrier Polarization in Ferromagnetic InGaAs/GaAs/δ-〈Mn〉 Heterostructures

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

It is found that the degree of circular polarization of the photoluminescence of an InGaAs/GaAs/δ-〈Mn〉 quantum well with a ferromagnetic Mn δ-layer (a GaAs spacer with thickness ds = 2–10 nm) depends largely on the conditions of photoexcitation (mainly the power density). This is explained by the dynamic model of the spin-dependent capture of electrons from a quantum well into a δ-〈Mn〉 layer and manifests as nonstationary polarization in the pulsed mode. The stationary mechanism of carrier polarization also plays an important role in structures with a narrow spacer (ds ≤ 3 nm), due to their exchange coupling with the δ-〈Mn〉 layer.

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Funding

This work was performed as part of a State Task for the Institute of Solid State Physics, Russian Academy of Sciences.

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Authors and Affiliations

  1. Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia

    S. Zaitsev

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  1. S. Zaitsev
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Correspondence to S. Zaitsev.

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The author declares that he has no conflicts of interest.

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Translated by O. Zhukova

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Zaitsev, S. Mechanisms of Carrier Polarization in Ferromagnetic InGaAs/GaAs/δ-〈Mn〉 Heterostructures. Bull. Russ. Acad. Sci. Phys. 86, 443–447 (2022). https://doi.org/10.3103/S106287382204027X

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  • DOI: https://doi.org/10.3103/S106287382204027X

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