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Temperature Dependence of Circularly Polarized Emissions of Chiral Injection Semiconductor Lasers

Abstract

A study is performed of the temperature dependence of lasing and the degree of circular polarization of emissions from an electrically pumped semiconductor laser at temperatures of up to ~140 K. The laser is based on an AlAs/AlGaAs microcavity with GaAs quantum wells in the active region and a photonic crystal with chiral symmetry in the top layer of the upper bragg mirror. At maximum values of ~25 mA for the pulsed pump current, developed multimode lasing is observed at temperatures of up to ~90 K. Such lasing is in the form of narrow spectral bands with high degrees of circular polarization of radiation (>70%).

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ACKNOWLEDGMENTS

The authors thank S. Höffling and C. Schneider for providing their specimens, and V.D. Kulakovskii and S.G. Tikho-deev for their helpful advice.

Funding

This work was supported in part by the Russian Foundation for Basic Research, project nos. 19-02-00697 and 20‑02-00534.

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Correspondence to A. A. Maksimov.

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The authors declare that they have no conflicts of interest.

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Translated by E. Smirnova

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Maksimov, A.A., Filatov, E.V. & Tartakovskii, I.I. Temperature Dependence of Circularly Polarized Emissions of Chiral Injection Semiconductor Lasers. Bull. Russ. Acad. Sci. Phys. 86, 404–407 (2022). https://doi.org/10.3103/S1062873822040153

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  • DOI: https://doi.org/10.3103/S1062873822040153