Relationship between Dielectric Relaxation and the Electronic States at the Grain Boundaries of a Ceramic Ferroelectric Semiconductor

Abstract

Structural data are presented along with the results from an impedance spectroscopy study of relaxation at temperatures above and below that of the ferroelectric phase transition of polycrystalline barium–strontium titanate doped with cerium and lanthanum in weak electric fields. The results are interpreted and the electrophysical parameters of grain boundaries are determined using the Heywang model.

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Correspondence to A. M. Solodukha.

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Translated by I. Obrezanova

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Grigoryan, G.S., Solodukha, A.M. Relationship between Dielectric Relaxation and the Electronic States at the Grain Boundaries of a Ceramic Ferroelectric Semiconductor. Bull. Russ. Acad. Sci. Phys. 84, 1411–1414 (2020). https://doi.org/10.3103/S1062873820110118

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