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Modeling Polarization Switching in Thin Ferroelectric Films

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A modified three-dimensional Ising model that considers the contribution from the depolarization field is used to study polarization switching in thin ferroelectric films. The effect the film thickness and the depolarization field have on the strength of the coercive field and the shape of dielectric hysteresis curve is studied.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 19-32-50032.

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Authors and Affiliations

  1. Cherepovets State University, 162600, Cherepovets, Vologda oblast, Russia

    O. S. Baruzdina, O. G. Maksimova, A. V. Maksimov & V. I. Egorov

  2. Voronezh State University, 394018, Voronezh, Russia

    O. S. Baruzdina

Authors
  1. O. S. Baruzdina
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  2. O. G. Maksimova
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  3. A. V. Maksimov
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  4. V. I. Egorov
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Corresponding author

Correspondence to O. S. Baruzdina.

Additional information

Translated by I. Obrezanova

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Baruzdina, O.S., Maksimova, O.G., Maksimov, A.V. et al. Modeling Polarization Switching in Thin Ferroelectric Films. Bull. Russ. Acad. Sci. Phys. 84, 1075–1078 (2020). https://doi.org/10.3103/S1062873820090075

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  • DOI: https://doi.org/10.3103/S1062873820090075

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