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Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar semiconductor multilayers are discussed. It is shown that the proposed matrix method allows calculation of the excess minority carrier distributions in a relatively short time with an accuracy sufficient for use in electron probe techniques.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 19-03-00271, and by the Russian Foundation for Basic Research and the government of Kaluga oblast, project no. 18-41-400001.

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Authors and Affiliations

  1. Kaluga State University, 248023, Kaluga, Russia

    V. V. Kalmanovich & M. A. Stepovich

  2. Bauman Moscow State Technical University, 248000, Kaluga, Kaluga Branch, Russia

    E. V. Seregina

Authors
  1. V. V. Kalmanovich
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  2. E. V. Seregina
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  3. M. A. Stepovich
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Corresponding author

Correspondence to V. V. Kalmanovich.

Additional information

Translated by E. Bondareva

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Kalmanovich, V.V., Seregina, E.V. & Stepovich, M.A. Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers. Bull. Russ. Acad. Sci. Phys. 84, 844–850 (2020). https://doi.org/10.3103/S1062873820070138

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  • DOI: https://doi.org/10.3103/S1062873820070138

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