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Temperature quenching of the luminescence of SiV centers in CVD diamond films

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The kinetic characteristics and temperature quenching of the luminescence of optical centers of silicon vacancies (SiVs) in diamond films grown in microwave plasma on substrates of aluminum nitride and synthetic diamond are investigated via laser excitation at a wavelength of 640 nm.

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Correspondence to A. S. Emelyanova.

Additional information

Original Russian Text © A.S. Emelyanova, A.L. Rakevich, E.F. Martynovich, V.P. Mironov, A.P. Bolshakov, V.S. Sedov, V.G. Ralchenko, V.I. Konov, 2017, published in Izvestiya Rossiiskoi Akademii Nauk, Seriya Fizicheskaya, 2017, Vol. 81, No. 9, pp. 1284–1289.

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Emelyanova, A.S., Rakevich, A.L., Martynovich, E.F. et al. Temperature quenching of the luminescence of SiV centers in CVD diamond films. Bull. Russ. Acad. Sci. Phys. 81, 1154–1158 (2017). https://doi.org/10.3103/S106287381709009X

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  • DOI: https://doi.org/10.3103/S106287381709009X

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