Skip to main content
SpringerLink
Log in

Method for predicting the effects of radiative relaxation in bipolar integrated circuits

  • Proceedings of the 23rd International Scientific Conference “Relaxation Phenomena in Solids,” Dedicated to the Centenary of the Birth of V.S. Postnikov
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A method for parametrically predicting the level of non-malfunction work for bipolar integrated circuits under the effects of pulsed gamma neutron radiation with allowance for the relaxation of short-term displacement effects is proposed. The parameters that determine the production margins and radiation sensitivity of parameter U OL (i.e., the low-level output voltage, the degradation of which generally determines the radiation resistance of bipolar digital integrated circuits) were selected as the ones used in predictions.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Tapero, K.I., Ulimov, V.N., and Chlenov, A.M., Radiatsionnye effekty v kremnievykh integral’nykh skhemakh kosmicheskogo primeneniya (Radiation Effects in Silicon Integrated Circuits for Space Application), Moscow: Binom. Laboratoriya znanii, 2012.

    Google Scholar 

  2. Vorob’ev, M.M., Vopr. At. Nauki Tekh., Ser.: Fiz. Radiats. Vozdeistv. Radioelektron. Appar., 2002, no. 3, p. 13.

    Google Scholar 

  3. Panyushkin, N.N., Vopr. At. Nauki Tekh., Ser.: Fiz. Radiats. Vozdeistv. Radioelektron. Appar., 2012, no. 1, p. 21.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Morozov State University of Forestry Engineering, Voronezh, 394087, Russia

    N. N. Panyushkin & N. N. Matveev

Authors
  1. N. N. Panyushkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. N. Matveev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. N. Panyushkin.

Additional information

Original Russian Text © N.N. Panyushkin, N.N. Matveev, 2016, published in Izvestiya Rossiiskoi Akademii Nauk, Seriya Fizicheskaya, 2016, Vol. 80, No. 9, pp. 1266–1268.

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Panyushkin, N.N., Matveev, N.N. Method for predicting the effects of radiative relaxation in bipolar integrated circuits. Bull. Russ. Acad. Sci. Phys. 80, 1152–1154 (2016). https://doi.org/10.3103/S1062873816090343

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1062873816090343

Search

Navigation