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Graphitization of a diamond surface upon high-dose ion bombardment

  • Proceedings of the 22nd International Conference “Ion-Surface Interaction (ISI-2015)”
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.

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Correspondence to A. M. Borisov.

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Original Russian Text © N.N. Andrianova, A.M. Borisov, V.A. Kazakov, E.S. Mashkova, Yu.N. Palyanov, E.A. Pitirimova, V.P. Popov, R.N. Rizakhanov, S.K. Sigalaev, 2016, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2016, Vol. 80, No. 2, pp. 175–180.

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Andrianova, N.N., Borisov, A.M., Kazakov, V.A. et al. Graphitization of a diamond surface upon high-dose ion bombardment. Bull. Russ. Acad. Sci. Phys. 80, 156–160 (2016). https://doi.org/10.3103/S1062873816020040

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  • DOI: https://doi.org/10.3103/S1062873816020040

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