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Role of long-range shear stresses in the plastic deformation of epitaxial films

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The dependence of elastic energy on relaxation parameters ρ x and ρ y varying in limits from 0 to 1 is analyzed for near-surface layers of an In0.1Ga0.9As epitaxial film on a GaAs (001) substrate whose thickness exceeds the distance between neighboring misfit dislocations.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    A. S. Ilin, A. V. Kolesnikov, E. M. Trukhanov & I. D. Loshkarev

Authors
  1. A. S. Ilin
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  2. A. V. Kolesnikov
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  3. E. M. Trukhanov
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  4. I. D. Loshkarev
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Corresponding author

Correspondence to E. M. Trukhanov.

Additional information

Original Russian Text © A.S. Ilin, A.V. Kolesnikov, E.M. Trukhanov, I.D. Loshkarev, 2015, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2015, Vol. 79, No. 6, pp. 840–844.

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Ilin, A.S., Kolesnikov, A.V., Trukhanov, E.M. et al. Role of long-range shear stresses in the plastic deformation of epitaxial films. Bull. Russ. Acad. Sci. Phys. 79, 763–766 (2015). https://doi.org/10.3103/S1062873815060131

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  • DOI: https://doi.org/10.3103/S1062873815060131

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