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EXAFS and XPS studies of germanium and gallium arsenide nanostructures in porous aluminum oxide matrices

  • Proceedings of the 20th National Conference on the Use of Synchrotron Radiation “SR-2014” and the National Youth Conference “Using Synchrotron Radiation”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The local atomic structure and chemical bonds of germanium and gallium arsenide, specimens of an isoelectronic series, are studied. Both materials are obtained via thermal evaporation of the materials’ powders onto porous matrices of anodic aluminum oxide and polycorr substrates. The mechanism responsible for the formation of local atomic structure is shown to be almost identical for Ge and GaAs. When compared to the films on polycorr surfaces, changes in local atomic structure are observed in the material obtained in porous matrices due to the difference between the mechanisms of condensation on rough and smooth surfaces.

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Correspondence to R. G. Valeev.

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Original Russian Text © R.G. Valeev, A.N. Beltukov, V.V. Kriventsov, N.A. Mezentsev, V.M. Vetoshkin, 2015, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2015, Vol. 79, No. 1, pp. 160–164.

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Valeev, R.G., Beltukov, A.N., Kriventsov, V.V. et al. EXAFS and XPS studies of germanium and gallium arsenide nanostructures in porous aluminum oxide matrices. Bull. Russ. Acad. Sci. Phys. 79, 144–148 (2015). https://doi.org/10.3103/S1062873815010335

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  • DOI: https://doi.org/10.3103/S1062873815010335

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