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Modeling the formation kinetics of wedge-shaped germanium quantum dots on silicon

  • Proceedings of the International Symposium “Physics of Crystals 2013”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A mathematical model for calculating the dependences of the parameters of self-organized germanium quantum dots (QDs) on silicon on the conditions of growth in molecular beam epitaxy is described. The energies of formation for pyramidal and wedge-shaped islands in the Ge/Si(001) system are calculated with allowance for the contributions from surface energy and elastic stress relaxation, and the drop in the energy of attraction between atoms and the substrate.

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Authors and Affiliations

  1. National Research Tomsk State University, Tomsk, 634050, Russia

    A. V. Voitsekhovskii, A. P. Kokhanenko & K. A. Lozovoy

Authors
  1. A. V. Voitsekhovskii
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  2. A. P. Kokhanenko
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  3. K. A. Lozovoy
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Corresponding author

Correspondence to K. A. Lozovoy.

Additional information

Original Russian Text © A.V. Voitsekhovskii, A.P. Kokhanenko, K.A. Lozovoy, 2014, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2014, Vol. 78, No. 10, pp. 1312–1316.

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Voitsekhovskii, A.V., Kokhanenko, A.P. & Lozovoy, K.A. Modeling the formation kinetics of wedge-shaped germanium quantum dots on silicon. Bull. Russ. Acad. Sci. Phys. 78, 1058–1062 (2014). https://doi.org/10.3103/S1062873814100220

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  • DOI: https://doi.org/10.3103/S1062873814100220

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