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Effect of technological conditions on the magnetic and magnetoresistive properties of Fe20Ni80/Fe50Mn50 films

  • Proceedings of the XIV All-Russian School Seminar on Condensed State Physics, Dedicated to the Memory of Academician A. M. Ilyin
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The effect several physical and technological factors have on the magnetic and magnetoresistive properties of Fe20Ni80/Fe50Mn50 multilayers is studied. The best technological conditions for preparing films with high exchange bias fields (∼30 Oe) and high anisotropy of the magnetoresistive effect (∼2%) are determined.

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References

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Authors and Affiliations

  1. Ural Federal University, Yekaterinburg, 620083, Russia

    A. N. Gor’kovenko, V. N. Lepalovskij, P. A. Savin & V. O. Vas’kovskiy

Authors
  1. A. N. Gor’kovenko
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  2. V. N. Lepalovskij
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  3. P. A. Savin
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  4. V. O. Vas’kovskiy
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Corresponding author

Correspondence to A. N. Gor’kovenko.

Additional information

Original Russian Text © A.N. Gor’kovenko, V.N. Lepalovskij, P.A. Savin, V.O. Vas’kovskiy, 2014, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2014, Vol. 78, No. 9, pp. 1168–1170.

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Gor’kovenko, A.N., Lepalovskij, V.N., Savin, P.A. et al. Effect of technological conditions on the magnetic and magnetoresistive properties of Fe20Ni80/Fe50Mn50 films. Bull. Russ. Acad. Sci. Phys. 78, 925–926 (2014). https://doi.org/10.3103/S1062873814090068

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  • DOI: https://doi.org/10.3103/S1062873814090068

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