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Submonolayer films on a Si(111) surface under low-energy ion bombardment

  • S. J. NimatovEmail author
  • D. S. Rumi
Proceedings of the 21st International Conference “Ion-Surface Interaction (ISI-2013)”
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Abstract

The kinetics of deposition for monomolecular submonolayer films on a Si(111) surface is studied via low-energy electron diffraction with measurements of the intensities of diffraction reflection and the elastic background. The degree of structural perfection in growing films is estimated for alkali-metal silicides and silicon from low-energy beams. The optimum energy and dose intervals of silicide film formation are determined.

Keywords

Electron Work Function Silicon Tetrachloride Channel Electron Multiplier Primary Electron Beam Energy Submonolayer Film 
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References

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    Garafutdinova, I.A., Atabaev, B.G., Rumi, D.S., et al., Proc. 23rd Int. Conf. on Photonic Electronic and Atomic Collisions, Stockholm, 2003.Google Scholar
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    Rumi, D.S., Nimatov, S.J., and Garafutdinova, I.A., Poverkhn. Rentgen., Sinkhrotron. Neitron. Issl., 2006, no. 5, p. 79.Google Scholar
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Copyright information

© Allerton Press, Inc. 2014

Authors and Affiliations

  1. 1.Tashkent State Technical UniversityTashkentUzbekistan
  2. 2.NTP PROTONTashkentUzbekistan

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