Submonolayer films on a Si(111) surface under low-energy ion bombardment

  • S. J. NimatovEmail author
  • D. S. Rumi
Proceedings of the 21st International Conference “Ion-Surface Interaction (ISI-2013)”


The kinetics of deposition for monomolecular submonolayer films on a Si(111) surface is studied via low-energy electron diffraction with measurements of the intensities of diffraction reflection and the elastic background. The degree of structural perfection in growing films is estimated for alkali-metal silicides and silicon from low-energy beams. The optimum energy and dose intervals of silicide film formation are determined.


Electron Work Function Silicon Tetrachloride Channel Electron Multiplier Primary Electron Beam Energy Submonolayer Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Garafutdinova, I.A., Atabaev, B.G., Rumi, D.S., et al., Proc. 23rd Int. Conf. on Photonic Electronic and Atomic Collisions, Stockholm, 2003.Google Scholar
  2. 2.
    Rumi, D.S., Atabaev, B.G., Garafutdinova, I.A., et al., Poverkhn. Rentgen., Sinkhrotron. Neitron. Issl., 2004, no. 4, p. 82.Google Scholar
  3. 3.
    Rumi, D.S., Nimatov, S.J., and Garafutdinova, I.A., Poverkhn. Rentgen., Sinkhrotron. Neitron. Issl., 2006, no. 5, p. 79.Google Scholar
  4. 4.
    Garafutdinova, I.A., Dzhamaletdinov, I.Kh., Rumi, D.S., et al., in Metod DME v izuchenii protsessov na real’noi poverkhnosti monokristallov (Density Matrix Evolution Method for Studying Processes Taking Place on Real Surface of Monocrystal), Tashkent: FAN, 1986, note no. 395.Google Scholar

Copyright information

© Allerton Press, Inc. 2014

Authors and Affiliations

  1. 1.Tashkent State Technical UniversityTashkentUzbekistan
  2. 2.NTP PROTONTashkentUzbekistan

Personalised recommendations