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Chaotic potential on semiconductor boundary under conditions of the partial self-organization of the surface ion charge

  • V. B. Bondarenko
  • A. V. FilimonovEmail author
  • A. I. Rudskoy
Proceedings of the 21st International Conference “Ion-Surface Interaction (ISI-2013)”

Abstract

The possibility of varying the parameters of electrostatic chaotic potential on a semiconductor surface with the association of point defects is investigated. Two models of surface dipole structures are considered. The amplitude and type of chaotic potential spread are determined under conditions of the partial self-organization of the ion charge. A reduction in the degree of chaos is obtained that depends on a structural parameter of a system of dipoles (their surface concentration).

Keywords

Semiconductor Surface Space Charge Layer Coulomb Center Chaotic Potential Poisson Ensemble 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Bonch-Bruevich, V.L., Zvyagin, I.P., Kaiper, R., et al., Elektronnaya teoriya neuporyadochennykh poluprovodnikov (Electronic Theory of Disordered Semiconductors), Moscow: Nauka, 1981.Google Scholar
  2. 2.
    Bondarenko, V.B., Kuz’min, M.V., and Korablev, V.V., Fiz. Tekh. Poluprovodn., 2001, vol. 35, no. 8, p. 964.Google Scholar
  3. 3.
    Filimonov, A.V., Bondarenko, V.B., Koroleva, E.Yu. Poverkhn. Rentgen., Sinkhrotron. Neitron. Issl., 2006, no. 7, p. 78.Google Scholar
  4. 4.
    Bondarenko, V.B., Korablev, V.V., and Ravich, Yu.I, Fiz. Tekh. Poluprovodn., 2004, vol. 38, no. 3, p. 331.Google Scholar
  5. 5.
    Bondarenko, V.B., Davydov, S.N., and Filimonov, A.V., Fiz. Tekh. Poluprovodn., 2010, vol. 44, no. 1, p. 44.Google Scholar
  6. 6.
    Bondarenko, V.B., Filimonov, A.V., and Koroleva, E.Yu., Poverkhn. Rentgen., Sinkhrotron. Neitron. Issl., 2010, no. 10, p. 79.Google Scholar
  7. 7.
    Bondarenko, V.B., Filimonov, A.V., and Rudskoi, A.I., Bull. Russ. Acad. Sci. Phys., 2012, vol. 76, no. 5, p. 570.CrossRefGoogle Scholar
  8. 8.
    Bulyarskii, S.V. and Fistul’, V.I., Termodinamika i kinetika vzaimodeistvuyushchikh defektov v poluprovodnikakh (Thermodynamics and Kinetics of Interacting Defects in Semiconductors), Moscow: Nauka, Fizmatlit, 1997.Google Scholar
  9. 9.
    Dorozhkin, A.A., Ershov, S.G., and Filimonov, A.V., Bull. Russ. Acad. Sci. Phys., 1994, vol. 58, no. 3, p. 426.Google Scholar
  10. 10.
    Dorozhkin, A.A., Ershov, S.G., Filimonov, A.V., and Petrov, N.N., Zh. Tekhn. Fiz., 1994, vol. 64, no. 12, p. 132.Google Scholar
  11. 11.
    Filimonov, A.V., Petrov, N.N., Koroleva, E.Yu., and Korablev, V.V., Bull. Russ. Acad. Sci. Phys., 2000, vol. 64, no. 4, p. 672Google Scholar
  12. 12.
    Dmitriev, S.G. and Markin, Yu.V., Fiz. Tekh. Poluprovodn., 1996, vol. 30, no. 7, p. 1231.Google Scholar

Copyright information

© Allerton Press, Inc. 2014

Authors and Affiliations

  • V. B. Bondarenko
    • 1
  • A. V. Filimonov
    • 1
    Email author
  • A. I. Rudskoy
    • 1
  1. 1.St. Petersburg State Polytechnical UniversitySt. PetersburgRussia

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