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Optimal and nonoptimal misfit stress relaxation in a semiconductor heterosystem

  • Proceedings of the International Symposium “Ordering in Minerals and Alloys” OMA-16 and Proceedings of the International Symposium “Order, Disorder, and Properties of Oxides” ODPO-16
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope


Misfit stress relaxation processes in a semiconductor heterosystem are divided into optimal and nonoptimal. Depending on the type of a process and degree of its completeness, four variants of a uniform stress field are established and experimentally detected in the surface layer of an epitaxial film. The interaction between threading dislocations that favors the transformation of nonoptimal relaxation into optimal is investigated.

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Correspondence to E. M. Trukhanov.

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Original Russian Text © E.M. Trukhanov, A.P. Vasilenko, I.D. Loshkarev, A.V. Kolesnikov, 2014, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2014, Vol. 78, No. 4, pp. 472–475.

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Trukhanov, E.M., Vasilenko, A.P., Loshkarev, I.D. et al. Optimal and nonoptimal misfit stress relaxation in a semiconductor heterosystem. Bull. Russ. Acad. Sci. Phys. 78, 307–310 (2014).

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