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Forming extremely small gaps in metal nanowires and studying their properties

  • Proceedings of the XIV National Seminar “Physics and Application of Microwaves”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A method for forming extremely small gaps (1–5 nm) in planar metallic nanowires for a new generation of nanoelectronic elements is developed using the electromigration effect. The dynamics of forming such gaps and their electrical characteristics are studied.

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Authors and Affiliations

  1. Faculty of Physics, Moscow State University, Moscow, 119991, Russia

    S. A. Dagesyan, E. S. Soldatov & A. S. Stepanov

Authors
  1. S. A. Dagesyan
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  2. E. S. Soldatov
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  3. A. S. Stepanov
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Corresponding author

Correspondence to S. A. Dagesyan.

Additional information

Original Russian Text © S.A. Dagesyan, E.S. Soldatov, A.S. Stepanov, 2014, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2014, Vol. 78, No. 2, pp. 211–215.

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Dagesyan, S.A., Soldatov, E.S. & Stepanov, A.S. Forming extremely small gaps in metal nanowires and studying their properties. Bull. Russ. Acad. Sci. Phys. 78, 139–143 (2014). https://doi.org/10.3103/S1062873814020117

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  • DOI: https://doi.org/10.3103/S1062873814020117

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