Precision depth profiling of nanoelectronic structures using secondary molecular ions in secondary-ion mass spectrometry

  • A. N. PustovitEmail author
  • A. F. Vyatkin
Proceedings of the XVII Russian Symposium on Scanning Electron Microscopy and Analytical Methods of Investigation Applied for Solid States Physics


A method for improving SIMS depth profiling by recording secondary molecular ions is proposed. Experimental studies of SiGe and AlGaAs nanometer-scale test structures, and of boron-doped Si with an energy of 5 keV showed improved secondary-ion mass spectroscopy depth resolution when recording secondary molecular ions. A physical model that considers the molecular ion dissociation energy to be a decisive parameter is discussed.


Half Height Depth Resolution Atomic Particle Escape Depth Secondary Ionic Emission 
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© Allerton Press, Inc. 2012

Authors and Affiliations

  1. 1.Institute of Microelectronics Technology and High-Purity MaterialsRussian Academy of SciencesChernogolovkaRussia

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