Investigating the optical properties of a near-surface layer in silicon implanted by zinc after thermal annealing

  • V. V. PrivezentsevEmail author
  • M. V. Chukichev
  • R. V. Mironov
  • Yu. V. Krivenkov
Proceedings of the XVII Russian Symposium on Scanning Electron Microscopy and Analytical Methods of Investigation Applied for Solid States Physics


Changes in the optical properties of a Si layer broken as a result of implantation by Zn ions are investigated during thermal annealing. The investigations are performed by Raman scattering (RS), ellipsometry, and cathodoluminescence (CL). The implanted samples show a broken area with a thickness of about 60 nm with partial amorphization. Thermal treatment at 400°C results in the partial annealing of a radiation point defect while reducing the thickness of the broken layer to 40 nm. The broken layer was completely restored after high-temperature annealing at 700°C.


Amorphous Silicon Break Layer Raman Scattering Spectrum Surface Silicon Layer Relative Pulse Duration 
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Copyright information

© Allerton Press, Inc. 2012

Authors and Affiliations

  • V. V. Privezentsev
    • 1
    Email author
  • M. V. Chukichev
    • 2
  • R. V. Mironov
    • 3
  • Yu. V. Krivenkov
    • 4
  1. 1.Physicotechnical InstituteRussian Academy of SciencesMoscowRussia
  2. 2.Faculty of PhysicsMoscow State UniversityMoscowRussia
  3. 3.Fiber Optics Research CenterRussian Academy of SciencesMoscowRussia
  4. 4.Molecular Electronics Research Institute and Micron FactoryMoscowRussia

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