Investigating the optical properties of a near-surface layer in silicon implanted by zinc after thermal annealing
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Changes in the optical properties of a Si layer broken as a result of implantation by Zn ions are investigated during thermal annealing. The investigations are performed by Raman scattering (RS), ellipsometry, and cathodoluminescence (CL). The implanted samples show a broken area with a thickness of about 60 nm with partial amorphization. Thermal treatment at 400°C results in the partial annealing of a radiation point defect while reducing the thickness of the broken layer to 40 nm. The broken layer was completely restored after high-temperature annealing at 700°C.
KeywordsAmorphous Silicon Break Layer Raman Scattering Spectrum Surface Silicon Layer Relative Pulse Duration
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