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Electron beam lithography with a Gaussian current distribution for nanolithography

  • O. D. PotapkinEmail author
Proceedings of the XVII Russian Symposium on Scanning Electron Microscopy and Analytical Methods of Investigation Applied for Solid States Physics
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Abstract

The parameters of a system of electron beam lithography with a Gaussian current density distribution are studied. The dependence of resolution on magnification and the ratio of anode potentials are analyzed. A model of a three-electrode electron gun with a ZrO/W cathode is used. Stochastic aberration is taken into account. It is shown that a resolution of 10 nm is obtainable even if an electron gun with the simplest geometry is used.

Keywords

Objective Lens Electron Beam Lithography Spherical Aberration Chromatic Aberration Aperture Angle 
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Copyright information

© Allerton Press, Inc. 2012

Authors and Affiliations

  1. 1.Moscow State Technical University of Radio Engineering, Electronics, and AutomationMoscowRussia

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