Skip to main content
SpringerLink
Log in

Computer simulation and experimental investigation of the crystal structure and electronic properties of InN/Si and GaN/Si thin films

  • Proceedings of the 20th International Conference “Ion-Surface Interaction (ISI-2011)”s
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A modified method for the magnetron deposition of heterostructures on single-crystal substrates that combines a high degree of efficiency and a high production rate is developed. Grown structures are simulated within the density functional theory to determine the most stable atomic positions in the InN/Si and GaN/Si interfaces.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Kim, J.W., Yeom, H.W., Kong, K.J., et al., Phys. Rev. Lett., 2003, vol. 90, p. 106101.

    Article  ADS  Google Scholar 

  2. Rawdanowicz, T.A. and Narayan, J., Appl. Phys. Lett., 2004, vol. 85, pp. 133–135.

    Article  ADS  Google Scholar 

  3. Guo, Q., Ogata, M., Ding, Y., et al., J. Crystal Growth, 2009, vol. 311, no. 10, pp. 2783–2786.

    Article  ADS  Google Scholar 

  4. Blochl, P.E., Phys. Rev. B, 1994, vol. 50, pp. 17953–17979.

    Article  ADS  Google Scholar 

  5. Kresse, G. and Furthmuller, J., Phys. Rev. B, 1996, vol. 54, no. 16, pp. 11169–11186.

    Article  ADS  Google Scholar 

  6. Monkhorst, H. and Pack, J., Phys. Rev. B, 1976, vol. 13, no. 12, pp. 5188–5192.

    Article  MathSciNet  ADS  Google Scholar 

  7. Stampfl, C., Van de Walle, C.G., Vogel, D., et al., Phys. Rev. B, 2000, vol. 61, no. 12, pp. R7846–R7849.

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Dorodnitsyn Computing Center, Russian Academy of Sciences, Moscow, 119333, Russia

    K. K. Abgaryan & I. V. Mutigullin

  2. Moscow State University, Moscow, 119991, Russia

    D. I. Bazhanov

  3. Moscow Aviation Institute, Moscow, 125993, Russia

    S. Yu. Mikheev & Yu. A. Ryzhov

Authors
  1. K. K. Abgaryan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. I. Bazhanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. Yu. Mikheev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. I. V. Mutigullin
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Yu. A. Ryzhov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to K. K. Abgaryan.

Additional information

Original Russian Text © K.K. Abgaryan, D.I. Bazhanov, S.Yu. Mikheev, I.V. Mutigullin, Yu.A. Ryzhov, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 6, pp. 777–779.

About this article

Cite this article

Abgaryan, K.K., Bazhanov, D.I., Mikheev, S.Y. et al. Computer simulation and experimental investigation of the crystal structure and electronic properties of InN/Si and GaN/Si thin films. Bull. Russ. Acad. Sci. Phys. 76, 696–698 (2012). https://doi.org/10.3103/S1062873812060032

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1062873812060032

Keywords

Search

Navigation