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  • Proceedings of the 20th International Conference “Ion-Surface Interaction (ISI-2011)”
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Influence of oxygen dose and heat treatment conditions on the formation of ion synthesized borosilicate layers

Abstract

The results from investigating buried silicate layers formed by implantation in silicon with both oxygen and boron ions are presented. The properties of the synthesized layers were studied by means of infrared spectrometry, Auger spectrometry, and SIMS. It is shown a buried layer of silicate glass is formed in the system if the dose of molecular oxygen is 44017 cm2. Our results confirm the possibility of creating nanocluster systems in a buried layer in a silicon matrix.

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References

  1. 1.

    Aristov, V.V., Mordkovich, V.N., and Mal’tsev, P.P., Nano-Mikroskhemn. Tekhn., 2006, no. 12, p. 41.

  2. 2.

    Barabanenkov, M.Yu., Borun, A.F., Danilin, A.B., et al., Nucl. Instrum. Methods Res. B, 1991, vol. 58, p. 179.

    ADS  Article  Google Scholar 

  3. 3.

    Barabanenkov, M.Yu., Borun, A.F., Danilin, A.B., et al., Nucl. Instrum. Methods Res. B, 1992, vol. 66, p. 352.

    ADS  Article  Google Scholar 

  4. 4.

    Tyschenko, I.E. and Popov, V.P., Fiz. Tekhn. Poluprovodn., 2010, vol. 45, no. 3, p. 335.

    Google Scholar 

  5. 5.

    Kachurin, G.A. and Tyschenko, I.E., Mikroelektron., 1994, vol. 23, no. 6, p. 3.

    Google Scholar 

  6. 6.

    Krivelevich, S.A., Denisenko, Yu.I., and Tsyrulev, A.A., Proc. SPIE, 2004, vol. 5401, p. 119.

    ADS  Article  Google Scholar 

  7. 7.

    Krivelevich, S.A., Bachurin, V.I., Denisenko, Yu.I., et al., Izv. Akad. Nauk. Ser. Fiz., 2006, vol. 70, no. 6, p. 883; Krivelevich, S.A., Bachurin, V.I., Denisenko, Yu.I., and Selyukov, R.V., Bull. Russ. Acad. Sci. Phys., 2006, vol. 70, no.6, p. 1007.

    Google Scholar 

  8. 8.

    Tong, Q.-Y. and Gosele, U., Semiconductor Wafer Bonding: Science, Technology, New Yokr, 1998.

  9. 9.

    Yupu Li, Marsh, C.D., Nejim, A., et al., Nucl. Instrum. Methods Res. B, 1995, no. 99, p. 479.

  10. 10.

    Leier, A.F., Safronov, L.N., and Kachurin, G.A., Fiz. Tekhn. Poluprovodn., 1999, vol. 33, no. 4, p. 389.

    Google Scholar 

  11. 11.

    Kachurin, G.A., Yanovskaya, S.G., Volodin, V.A., et al., Fiz. Tekhn. Poluprovodn., 2002, vol. 36, no. 6, p. 68589.

    Google Scholar 

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Correspondence to S. A. Krivelevich.

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Original Russian Text © D.D. Zorina, N.P. Pron, S.A. Krivelevich, V.I. Bachurin, A.B. Churilov, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 5, pp. 659–663.

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Zorina, D.D., Pron, N.P., Krivelevich, S.A. et al. Influence of oxygen dose and heat treatment conditions on the formation of ion synthesized borosilicate layers. Bull. Russ. Acad. Sci. Phys. 76, 588–591 (2012). https://doi.org/10.3103/S1062873812050280

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Keywords

  • Boron
  • Hide Layer
  • Silicon Atom
  • Borosilicate Glass
  • Boron Atom