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Influence of oxygen dose and heat treatment conditions on the formation of ion synthesized borosilicate layers

  • D. D. Zorina
  • N. P. Pron
  • S. A. KrivelevichEmail author
  • V. I. Bachurin
  • A. B. Churilov
Proceedings of the 20th International Conference “Ion-Surface Interaction (ISI-2011)”
  • 17 Downloads

Abstract

The results from investigating buried silicate layers formed by implantation in silicon with both oxygen and boron ions are presented. The properties of the synthesized layers were studied by means of infrared spectrometry, Auger spectrometry, and SIMS. It is shown a buried layer of silicate glass is formed in the system if the dose of molecular oxygen is 44017 cm2. Our results confirm the possibility of creating nanocluster systems in a buried layer in a silicon matrix.

Keywords

Boron Hide Layer Silicon Atom Borosilicate Glass Boron Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Allerton Press, Inc. 2012

Authors and Affiliations

  • D. D. Zorina
    • 1
  • N. P. Pron
    • 1
  • S. A. Krivelevich
    • 2
    Email author
  • V. I. Bachurin
    • 2
  • A. B. Churilov
    • 2
  1. 1.Physics and Technology Institute, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia
  2. 2.Yaroslavl State UniversityYaroslavlRussia

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