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Formation of conductive layers inside diamond by hydrogen ion implantation and subsequent thermal treatment at low or high pressures

  • Proceedings of the 20th International Conference “Ion-Surface Interaction (ISI-2011)”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

(111) synthetic HPTP diamond plates are irradiated by H +2 50 keV ions in the range of the fluences of 1−13 × 1016 sm−2 and annealed in vacuum at 1 mPa (VPHT, 500–1600°C) or at high HPHT parameters (4.0–7.5 GPa, 1200–1550°C). It is shown by measuring the layer conductivity and Raman light scattering that after VPHT annealing, a buried layer of glassy carbon 10–100 nm thick with low resistance (∼1 kOhm/□) is formed, followed by HPHT with high resistance (∼1 MOhm/□) and hopping transport along defects.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    V. P. Popov, L. N. Safronov, O. V. Naumova & V. A. Volodin

  2. Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    I. N. Kupriyanov & Yu. N. Pal’yanov

Authors
  1. V. P. Popov
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  2. L. N. Safronov
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  3. O. V. Naumova
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  4. V. A. Volodin
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  5. I. N. Kupriyanov
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  6. Yu. N. Pal’yanov
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Additional information

Original Russian Text © V.P. Popov, L.N. Safronov, O.V. Naumova, V.A. Volodin, I.N. Kupriyanov, Yu.N. Pal’yanov, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 5, pp. 647–652.

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Popov, V.P., Safronov, L.N., Naumova, O.V. et al. Formation of conductive layers inside diamond by hydrogen ion implantation and subsequent thermal treatment at low or high pressures. Bull. Russ. Acad. Sci. Phys. 76, 577–581 (2012). https://doi.org/10.3103/S1062873812050206

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  • DOI: https://doi.org/10.3103/S1062873812050206

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