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Electrophysical parameters of the developed surface of a nanoporous semiconductor at the equilibrium distribution of a dopant: A case of cylindrical pores

  • Proceedings of the 20th International Conference “Ion-Surface Interaction (ISI-2011)”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The possibility of changing surface electrophysical parameters through the directed diffusion of electroactive defects in a built-in self-consistent field near cylindrical pores in a semiconductor is discussed. The analytic expressions for the equilibrium distributions of the charged dopant, electrostatic field, and potential in the space charge region of the abovementioned structures are found in a hydrodynamic approximation. It is shown that the self-organization of mobile ions in nanoporous semiconductors in the cases under consideration leads to a considerable change in the efficiency of adsorption both of the charged particles and neutral atoms and molecules on the developed surface.

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Authors and Affiliations

  1. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    V. B. Bondarenko, A. V. Filimonov & A. I. Rudskoy

Authors
  1. V. B. Bondarenko
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  2. A. V. Filimonov
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  3. A. I. Rudskoy
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Corresponding author

Correspondence to A. V. Filimonov.

Additional information

Original Russian Text © V.B. Bondarenko, A.V. Filimonov, A.I. Rudskoy, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 5, pp. 639–642.

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Bondarenko, V.B., Filimonov, A.V. & Rudskoy, A.I. Electrophysical parameters of the developed surface of a nanoporous semiconductor at the equilibrium distribution of a dopant: A case of cylindrical pores. Bull. Russ. Acad. Sci. Phys. 76, 570–573 (2012). https://doi.org/10.3103/S1062873812050097

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  • DOI: https://doi.org/10.3103/S1062873812050097

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