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Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces

  • Proceedings of the International Symposium “Ordering in Minerals and Alloys” (OMA-14)
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

It is shown for (111) and (001) interfaces that at an identical degree of strain relaxation in semi-conductor epitaxial films, the ratio of distances D between neighboring dislocations is D (111)/D (001) = 1.5. This allows us to establish that dislocation interface (7 7 10) contains partial 90° Shockley dislocations lying in three directions of 〈110〉.

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Authors and Affiliations

  1. Rzhanov Institute of Semoconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    E. M. Trukhanov, I. D. Loshkarev, K. N. Romanyuk, A. K. Gutakovskii, A. S. Ilin & A. V. Kolesnikov

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  1. E. M. Trukhanov
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  2. I. D. Loshkarev
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  3. K. N. Romanyuk
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  4. A. K. Gutakovskii
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  5. A. S. Ilin
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  6. A. V. Kolesnikov
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Corresponding author

Correspondence to E. M. Trukhanov.

Additional information

Original Russian Text © E.M. Trukhanov, I.D. Loshkarev, K.N. Romanyuk, A.K. Gutakovskii, A.S. Ilin, A.V. Kolesnikov, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 3, pp. 373–376.

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Trukhanov, E.M., Loshkarev, I.D., Romanyuk, K.N. et al. Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces. Bull. Russ. Acad. Sci. Phys. 76, 325–327 (2012). https://doi.org/10.3103/S1062873812030343

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  • DOI: https://doi.org/10.3103/S1062873812030343

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