Abstract
New AgGe1 + x As1 − x S3 (x = 0.1, 0.4–0.9) silver chalcogenides are synthesized and certified. Their electrical properties are studied at pressures of up to 45 GPa by means of impedance spectroscopy. Regions of significant variations in electrical properties are detected via analysis of an impedance hodograph, the baric dependencies of resistance, and the dielectric loss tangent.
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Original Russian Text © E.F. Shakirov, O.L. Kheifets, N.V. Melnikova, A.N. Babushkin, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 3, pp. 400–403.
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Shakirov, E.F., Kheifets, O.L., Melnikova, N.V. et al. Influence of high pressure on the electrical properties of amorphous chalcogenides of the Ag-Ge-As-S system. Bull. Russ. Acad. Sci. Phys. 76, 351–354 (2012). https://doi.org/10.3103/S106287381203029X
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DOI: https://doi.org/10.3103/S106287381203029X