Skip to main content
Log in

Influence of high pressure on the electrical properties of amorphous chalcogenides of the Ag-Ge-As-S system

  • Proceedings of the International Symposium “Ordering in Minerals and Alloys” (OMA-14)
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

New AgGe1 + x As1 − x S3 (x = 0.1, 0.4–0.9) silver chalcogenides are synthesized and certified. Their electrical properties are studied at pressures of up to 45 GPa by means of impedance spectroscopy. Regions of significant variations in electrical properties are detected via analysis of an impedance hodograph, the baric dependencies of resistance, and the dielectric loss tangent.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Baranova, E.R., Kobelev, V.L., Kobeleva, O.L., et al., Solid State Ionics, 1999, vol. 124, p. 255.

    Article  Google Scholar 

  2. Zlokazov, V.B., Mel’nikova, N.V., Baranova, E.R., et al., Elektrokhimiya, 1992, vol. 28, no. 10, p. 1523.

    Google Scholar 

  3. Baranova, E.R., Kobelev, V.L., Kobeleva, O.L., et al., Solid State Ionics, 2002, vol. 146, p. 415.

    Article  Google Scholar 

  4. Kheifets, O.L. and Babushkin, A.N., Fiz. Tekh. Vys. Davlenii, 2003, vol. 13, no. 4, p. 36.

    Google Scholar 

  5. Melnikova, N.V., Kheifets, O.L., and Babushkin, A.N., Int. Sci. J. Alternat. Energy Ecol., 2007, no. 5, p. 56.

  6. Baranova, E.R., Zlokazov, V.B., Kobelev, L.Ya., et al., RF Patent 1779192 Kl. H01C7/00, 1996.

  7. Korioniv, I.V. and Kheifets, O.L., Joint 20th AIRAPT and 43th EHPRG Meeting, Karlshrue, 2005.

  8. Kheifets, O.L., Melnikova, N.V., Pinigina, K.S., and Turutina, E.A., Sbornik trudov 12-go Mezhdunar. simp. “Uporyadochenie v mineralakh i splavakh” (Proc. 12th Int. Symp. “Ordering in Minerals and Alloys”), Rostov-on-Don-Loo, Sept. 10–16, 2009, vol. 2, pp. 213–214.

    Google Scholar 

  9. Vereshchagin, A.F., Yakovlev, E.N., and Stepanov, G.N., Pis’ma Zh. Eksp. Teor. Fiz., 1972, vol. 16, no. 4, p. 240.

    Google Scholar 

  10. Babushkin, A.N., Kandrina, Y.A., Kobeleva, O.L., et al., Frontiers of High Pressure Research II, Kluwer Press, 2001, vol. 146, pp. 131–141.

    Google Scholar 

  11. Kheifets, O.L. and Babushkin, A.N., Fiz. Tekh. Vys. Davlenii, 2003, vol. 13, no. 4, pp. 36–41.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to O. L. Kheifets.

Additional information

Original Russian Text © E.F. Shakirov, O.L. Kheifets, N.V. Melnikova, A.N. Babushkin, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 3, pp. 400–403.

About this article

Cite this article

Shakirov, E.F., Kheifets, O.L., Melnikova, N.V. et al. Influence of high pressure on the electrical properties of amorphous chalcogenides of the Ag-Ge-As-S system. Bull. Russ. Acad. Sci. Phys. 76, 351–354 (2012). https://doi.org/10.3103/S106287381203029X

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S106287381203029X

Keywords

Navigation