Abstract
A model for determining the critical thickness of a film h c is developed to introduce misfit dislocations in the slip planes of a film and a substrate parallel to the interphase boundary (111). Experimental values h c that agree with calculated values are determined for the Ge/Si(111) and Si3N4/Ge(111) heterosystems. The two-level epitaxial growth of Ge on Si is attained in the regime of combining the step-layer and 2D island growth mechanisms.
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Original Russian Text © I.D. Loshkarev, E.M. Trukhanov, K.N. Romanyuk, M.M. Kachanova, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 3, pp. 425–428.
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Loshkarev, I.D., Trukhanov, E.M., Romanyuk, K.N. et al. Theoretical and experimental determination of the initial stage of plastic relaxation of misfit stresses in a (111) substrate-film islands heterosystem. Bull. Russ. Acad. Sci. Phys. 76, 374–377 (2012). https://doi.org/10.3103/S1062873812030185
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DOI: https://doi.org/10.3103/S1062873812030185