Abstract
The nucleation of a new phase of a substance in a nonuniform stress field created during measurements of rigidity is considered. The phase diagram of silicon containing the Si I, II, and V phases are considered. The high-pressure boundaries of the phases formed near the indenter are found using the finite elements method.
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Original Russian Text © E.N. Klimova, M.-A.V. Zubkhadzhiev, K.Yu. Dukaeva, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 3, pp. 364–368.
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Klimova, E.N., Zubkhadzhiev, M.A.V. & Dukaeva, K.Y. Phase transitions in a nonuniformly stressed state of matter. Bull. Russ. Acad. Sci. Phys. 76, 317–320 (2012). https://doi.org/10.3103/S106287381203015X
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DOI: https://doi.org/10.3103/S106287381203015X