Abstract
The results from experiments employing coherent femtosecond spectroscopy in a layer of two-dimensional electron gas at the boundary of the GaAs/AlGaAs heterojunction at room temperature are presented. The decay curves of primary femtosecond photon echo are obtained. The decoherence time in two-dimensional electron gas depends strongly on the power of the exciting pulse and varies from 36 to 54 fs. The dephasing time is studied for the first time as a function of the power of exciting pulses at room temperature. It is established that this dependence obeys the law T 2 ∼ N −0.22, which differs from the typical law T 2 ∼ N −1 for unscreened electron-electron interaction in semiconductor crystals. Analysis shows that electron-phonon interaction plays an important part along with electron-electron interaction. The induced spin gratings in the GaAs/AlGaAs heterostructure are studied with an eye to their possible application in spintronics.
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Original Russian Text © K.V. Ivanin, A.V. Leont’ev, V.S. Lobkov, G.M. Safiullin, V.V. Samartsev, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 3, pp. 333–337.
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Ivanin, K.V., Leont’ev, A.V., Lobkov, V.S. et al. Femtosecond coherent spectroscopy of four-wave mixing and photon echoes in a GaAs/AlGaAs heterostructure at room temperature. Bull. Russ. Acad. Sci. Phys. 76, 290–294 (2012). https://doi.org/10.3103/S1062873812030124
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DOI: https://doi.org/10.3103/S1062873812030124