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Effect of the excitation level on the thermal quenching and dynamics of the photoluminescence of GaAs/AlGaAs shallow quantum well structures

  • Proceedings of the International Symposium “Nanophysics and Nanoelectronics-2011”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The effect of the excitation level on the dynamics of heavy-hole exciton photoluminescence in tunneling-isolated GaAs/Al x Ga1 − x As (x = 0.05) shallow quantum wells at temperatures of 5 to 70 K is investigated. It is shown that the exciton lifetimes depend strongly on the excitation level, while the activation energies characterizing the thermal escape of nonequilibrium charge carriers from the wells virtually do not.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    M. V. Kochiev, N. N. Sibeldin, M. L. Skorikov & V. A. Tsvetkov

Authors
  1. M. V. Kochiev
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  2. N. N. Sibeldin
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  3. M. L. Skorikov
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  4. V. A. Tsvetkov
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Corresponding author

Correspondence to M. V. Kochiev.

Additional information

Original Russian Text © M.V. Kochiev, N.N. Sibeldin, M.L. Skorikov, V.A. Tsvetkov, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 2, pp. 247–249.

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Kochiev, M.V., Sibeldin, N.N., Skorikov, M.L. et al. Effect of the excitation level on the thermal quenching and dynamics of the photoluminescence of GaAs/AlGaAs shallow quantum well structures. Bull. Russ. Acad. Sci. Phys. 76, 218–220 (2012). https://doi.org/10.3103/S1062873812020153

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  • DOI: https://doi.org/10.3103/S1062873812020153

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