Abstract
Experimental data on polytherms of the angle of wetting of silicon surface with tin-barium melts are presented. It is found that the polytherms are linear in the temperature range between the melting point and 900 K, exhibiting a negative slope coefficient.
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Betuganov, M.A., Karov, B.G., and Pushkov, V.A., Fizika mezhfaznykh yavlenii (Physics of Interphase Phenomena), Nalchik: KBGU, 1976, vol. 1, pp. 89–93.
Kozyrev, E.N., Obukhova, O.E., and Sozaev, V.A., Adgeziya v sisteme metall-poluprovodnik (Adhesion in the System Metal-Semiconductor), Vladikavkaz: SKGMI, 2004.
Poverkhnostnye svoistva rasplavov i tverdykh tel i ikh ispol’zovanie v materialovedenii (Surface Properties of Melts and Solids and Their Application in Materials Science), Naidich, Yu.V., Ed., Kiev: Naukova Dumka, 1991.
Dalakova, N.V., Direktor, L.B., Kashezhev, A.Z., et al., Izv. Akad. Nauk. Ser. Fiz., 2010, vol. 74, no. 5, pp. 674–676 [Bull. Russ. Acad. Sci. Phys. (Engl. Transl.), 2010, vol. 74, no. 5, p. 637].
Varchenya, S.A. and Upit, G.P., Strength and Energy Characteristics of Metals Condensates Adhesion to Silicon and Quartz, Preprint of Institute of Physics of University of Latvia,, Salaspils, 1981.
Vedeneev, V.I., Gurvich, L.V., Kondrat’ev, V.N., Medvedev, V.A., and Frankevich, E.L., Energii razryva khimicheskikh svyazei. Potentsialy ionizatsii i srodstvo k elektrony (Chemical Bond Energies, Ionization Potentials and Electron Affinities), Moscow: Akad. Nauk SSSR, 1962.
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Original Russian Text © N.V. Dalakova, K.M. Elekoeva, A.Z. Kashezhev, M.Kh. Ponegev, V.A. Sozaev, 2011, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2011, Vol. 75, No. 8, pp. 1150–1152.
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Dalakova, N.V., Elekoeva, K.M., Kashezhev, A.Z. et al. Temperature dependence of angles of wetting of silicon with tin-barium melts. Bull. Russ. Acad. Sci. Phys. 75, 1089 (2011). https://doi.org/10.3103/S1062873811080119
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DOI: https://doi.org/10.3103/S1062873811080119